Proton-Induced SDRAM Cell Degradation

被引:0
作者
Rodriguez, A. [1 ]
Wrobel, F. [1 ,2 ]
Samaras, A. [3 ]
Bezerra, F. [4 ]
Vandevelde, B. [3 ]
Ecoffet, R. [4 ]
Touboul, A. [1 ]
Chatry, N. [3 ]
Dilillo, L. [5 ]
Saigne, F. [1 ]
机构
[1] Univ Montpellier, IES UMR UM CNRS 5214, 860 Rue St Priest,Bat 5, F-34097 Montpellier, France
[2] Inst Univ France, Paris, France
[3] TRAD, F-31670 Labege, France
[4] Ctr Natl Etud Spatiales, F-31400 Toulouse, France
[5] Univ Montpellier, LIRMM, CNRS, F-34095 Montpellier 5, France
来源
2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2015年
关键词
SDRAM; proton; retention time degradation; BULK DAMAGE;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Retention time degradation and cell functionality under proton irradiation is studied for two SDRAM references that exhibit in-flight faulty behavior. Elements that may be used for physical interpretation of the phenomenon are given.
引用
收藏
页数:4
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