Temperature-coefficient-of-resistance characteristics of sputter-deposited NixAl1-x thin films for 0.5 < x < 1

被引：13
作者：
Anand, TJS
Ng, HP
Ngan, AHW
Meng, XK
机构：
[1] Univ Hong Kong, Dept Mech Engn, Hong Kong, Hong Kong, Peoples R China
[2] Inst Natl Polytech Grenoble, ENSPG, Mat & Genie Phys Lab, UM 5628, F-38402 St Martin Dheres, France
[3] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
来源：
THIN SOLID FILMS | 2003年 / 441卷 / 1-2期
关键词：
alloys; electrical properties and measurements; resistivity; sputtering;
D O I：
10.1016/S0040-6090(03)00921-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
By investigating the thermal variations of electrical resistance of a range of NixAl1-x sputter-deposited films, where x = 0.5-1, it was found that a thermally-activated transition from the insulator to metal state on increasing temperature occurred only within a narrow range of x from 0.75 to 0.8. At all other values of x investigated, the conduction behavior of the films appeared to be metallic as expected. The same observations were made on two different sputtering systems with different deposition conditions, indicating that the electrical transition from x = 0.75 to 0.8 is a highly reproducible phenomenon. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：298 / 306
页数：9
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