Ultrafast Carrier Dynamics in Semiconductor Nanowires

被引：0

作者：

Prasankumar, R. P. ^{[1
]}

Choi, S. G. ^{[1
]}

Wang, G. T. ^{[2
]}

Upadhya, P. C. ^{[1
]}

Trugman, S. A. ^{[1
]}

Picraux, S. T. ^{[1
]}

Taylor, A. J. ^{[1
]}

机构：

[1] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, POB 1663, Los Alamos, NM 87545 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

ULTRAFAST PHENOMENA XVI | 2009年 / 92卷

关键词：

GERMANIUM; GROWTH;

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ultrafast wavelength-tunable optical measurements on semiconductor nanowires allow us to independently probe the dynamics of electrons, holes, and defect states. These investigations reveal the influence of two-dimensional confinement on carrier dynamics in these nanosystems.

引用

页码：271 / +

页数：2

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