Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology

被引:10
作者
Deng, Jun [1 ]
Yu, Jiadong [1 ,2 ]
Hao, Zhibiao [1 ,2 ]
Kang, Jianbin [3 ]
Lu, Boyang [1 ]
Wang, Lai [1 ,2 ]
Sun, Changzheng [1 ,2 ]
Han, Yanjun [1 ,2 ]
Xiong, Bing [1 ,2 ]
Wang, Jian [1 ,2 ]
Li, Hongtao [1 ,2 ]
Luo, Yi [1 ,2 ]
机构
[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Dept Elect Engn, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Ctr Flexible Elect Technol, Beijing 100084, Peoples R China
[3] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China
基金
国家重点研发计划; 中国博士后科学基金; 中国国家自然科学基金;
关键词
single-photon emitter; GaN/AlN; dot-in-wires; selective area growth; exciton-phonon coupling; EXCITON BINDING-ENERGY; PHOTOLUMINESCENCE; EMISSION;
D O I
10.1021/acsanm.1c04581
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We demonstrate an optically pumped single-photon emitter operating at room temperature based on disk-shaped GaN/AlN quantum dots embedded in the nanowire (dot-in-wire) structure, which can act as an optical source for future quantum information technologies. The disk-like geometry of the quantum dot (QD) leads to well-defined strain distribution and controllable optical properties of the QD structure, which is revealed by theoretical calculations using a continuous elasticity model. Site-controlled GaN/AlN dot-in-wires are grown by selective area growth on prepatterned Ti/N-polar AlN/Si substrates using molecular beam epitaxy. The internal quantum efficiency of GaN QDs is 31.1%, and their photoluminescence (PL) wavelengths are in good agreement with the calculation. Measured by a micro-PL spectroscopy integrated with a Hanbury-Brown and Twiss setup, the second-order correlation at zero time delay (g((2))(0)) reaches 0.19 at room temperature for the site-controlled GaN/AlN dot-in-wires. Our work provides a promising approach to realize high-performance single-photon emission devices on-demand for application in quantum information technology.
引用
收藏
页码:4000 / 4008
页数:9
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