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Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology
被引:10
作者:
Deng, Jun
[1
]
Yu, Jiadong
[1
,2
]
Hao, Zhibiao
[1
,2
]
Kang, Jianbin
[3
]
Lu, Boyang
[1
]
Wang, Lai
[1
,2
]
Sun, Changzheng
[1
,2
]
Han, Yanjun
[1
,2
]
Xiong, Bing
[1
,2
]
Wang, Jian
[1
,2
]
Li, Hongtao
[1
,2
]
Luo, Yi
[1
,2
]
机构:
[1] Tsinghua Univ, Beijing Natl Res Ctr Informat Sci & Technol BNRis, Dept Elect Engn, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Ctr Flexible Elect Technol, Beijing 100084, Peoples R China
[3] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Peoples R China
基金:
国家重点研发计划;
中国博士后科学基金;
中国国家自然科学基金;
关键词:
single-photon emitter;
GaN/AlN;
dot-in-wires;
selective area growth;
exciton-phonon coupling;
EXCITON BINDING-ENERGY;
PHOTOLUMINESCENCE;
EMISSION;
D O I:
10.1021/acsanm.1c04581
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
We demonstrate an optically pumped single-photon emitter operating at room temperature based on disk-shaped GaN/AlN quantum dots embedded in the nanowire (dot-in-wire) structure, which can act as an optical source for future quantum information technologies. The disk-like geometry of the quantum dot (QD) leads to well-defined strain distribution and controllable optical properties of the QD structure, which is revealed by theoretical calculations using a continuous elasticity model. Site-controlled GaN/AlN dot-in-wires are grown by selective area growth on prepatterned Ti/N-polar AlN/Si substrates using molecular beam epitaxy. The internal quantum efficiency of GaN QDs is 31.1%, and their photoluminescence (PL) wavelengths are in good agreement with the calculation. Measured by a micro-PL spectroscopy integrated with a Hanbury-Brown and Twiss setup, the second-order correlation at zero time delay (g((2))(0)) reaches 0.19 at room temperature for the site-controlled GaN/AlN dot-in-wires. Our work provides a promising approach to realize high-performance single-photon emission devices on-demand for application in quantum information technology.
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页码:4000 / 4008
页数:9
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