Preparation and Properties of Ce-Doped Bi4-xCexTi3O12 Thin Films

被引：1

作者：

Ren, Qianqian ^{[1
]}

Sun, Chang ^{[1
]}

Gu, Tianhang ^{[1
]}

Guo, Wen ^{[1
]}

机构：

[1] Shandong Jianzhu Univ, Sch Mat Sci & Engn, Jinan, Peoples R China

来源：

INTEGRATED FERROELECTRICS | 2022年 / 230卷 / 01期

关键词：

Ferroelectric film; rare earth element doping; sol-gel method; ferroelectric properties; SUBSTITUTED BISMUTH TITANATE; LARGE REMANENT POLARIZATION; FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES;

D O I：

10.1080/10584587.2022.2102801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ce-doped Bi4-XCexTi3O12 (BCT) films were prepared by the sol-gel method and the heat treatment process different from traditional ones. The experimental results show that the Bi4Ti3O12 (BTO) films still exhibit a single-phase bismuth-layered structure and can effectively improve the ferroelectric properties under the doping of Ce3+, and the maximum residual polarization intensity is 1.23 mu C/cm(2) when the doping amount is x = 1.35. At the same time, the heat treatment process different from the traditional process was used to explore the influence of the preparation process on the surface morphology and ferroelectric properties of the films.

引用

页码：85 / 90

页数：6

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