Re-distribution of oxide sintering aids in liquid-phase-sintered silicon carbide due to heat treatment

被引:1
|
作者
Miyazaki, H [1 ]
Kawaguchi, A [1 ]
Yano, T [1 ]
Iseki, T [1 ]
机构
[1] Tokyo Inst Technol, Dept Inorgan Mat, Meguro Ku, Tokyo 1528552, Japan
来源
MATERIALS SCIENCE AND ENGINEERING SERVING SOCIETY | 1998年
关键词
D O I
10.1016/B978-044482793-7/50037-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon carbide compacts were pressurelessly sintered with additives of alumina and yttria at 1900 degrees C for Ih in a powder bed of which composition is the same as the compact. Both Al and Y were homogeneously distributed in the as-sintered specimens. After the specimens were heat-treated at 1900 degrees C for 4h in a SiC powder bed, AZ was homogeneously distributed and its concentration reduced by half, whereas Y concentrated at surface area. Grains near the surface of the sintered body were small and irregular, but those inside grew large and platelike.
引用
收藏
页码:161 / 164
页数:4
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