GaN-based Room Temperature Spintronics for Next Generation Low Power Consumption Electronic Devices

被引：3
|
作者：
Saravade, Vishal [1 ]
Ghods, Amirhossein [1 ]
Woode, Andrew P. [1 ]
Zhou, Chuanle [1 ]
Ferguson, Ian [1 ,2 ]
机构：
[1] Missouri Univ Sci & Technol, Dept Elect & Comp Engn, Rolla, MO 65401 USA
[2] Kennesaw State Univ, Southern Polytech Coll Engn & Engn Technol, Marietta, GA 30060 USA
来源：
2019 IEEE 16TH INTERNATIONAL CONFERENCE ON SMART CITIES: IMPROVING QUALITY OF LIFE USING ICT, IOT AND AI (IEEE HONET-ICT 2019) | 2019年
关键词：
D O I：
10.1109/honet.2019.8908100
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
引用
收藏
页码：203 / 204
页数：2
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