Correlation of growth temperature, photoluminescence, and resistivity in GaN nanowires

被引：40

作者：

Talin, A. Alec ^{[1
,2
]}

Wang, George T. ^{[3
]}

Lai, Elaine ^{[1
]}

Anderson, Richard J. ^{[1
]}

机构：

[1] Sandia Natl Labs, Livermore, CA 94550 USA

[2] Ctr Integrated Nanotechnol, Albuquerque, NM 87185 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

关键词：

Electric conductivity - Gallium nitride - Growth temperature - Metallorganic chemical vapor deposition - Photoluminescence;

D O I：

10.1063/1.2889941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence and electrical transport of GaN nanowires grown by metal catalyzed metal-organic chemical vapor deposition were investigated as a function of substrate temperature during growth. As the growth temperature increased from 800 to 900 degrees C, the electrical conduction mechanism changed from space-charge limited to ohmic transport, the nanowire resistivity dropped from similar to 10(7) to similar to 10(-3) Omega cm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed. (c) 2008 American Institute of Physics.

引用

页数：3

共 14 条

[1] Size-dependent photoconductivity in MBE-grown GaN-nanowires [J].

Calarco, R ;

Marso, M ;

Richter, T ;

Aykanat, AI ;

Meijers, R ;

Hart, AV ;

Stoica, T ;

Luth, H .

NANO LETTERS, 2005, 5 (05) :981-984

[2] Deep acceptors trapped at threading-edge dislocations in GaN [J].

Elsner, J ;

Jones, R ;

Heggie, MI ;

Sitch, PK ;

Haugk, M ;

Frauenheim, T ;

Oberg, S ;

Briddon, PR .

PHYSICAL REVIEW B, 1998, 58 (19) :12571-12574

[3] GaN nanowire lasers with low lasing thresholds [J].

Gradecak, S ;

Qian, F ;

Li, Y ;

Park, HG ;

Lieber, CM .

APPLIED PHYSICS LETTERS, 2005, 87 (17) :1-3

[4] Space-charge-limited current in nanowires depleted by oxygen adsorption [J].

Gu, Y. ;

Lauhon, L. J. .

APPLIED PHYSICS LETTERS, 2006, 89 (14)

[5] Single gallium nitride nanowire lasers [J].

Johnson, JC ;

Choi, HJ ;

Knutsen, KP ;

Schaller, RD ;

Yang, PD ;

Saykally, RJ .

NATURE MATERIALS, 2002, 1 (02) :106-110

[6] Electrical conduction and photoluminescence properties of solution-grown ZnO nanowires [J].

Jones, Frank ;

Leonard, Francois ;

Talin, A. Alec ;

Bell, Nelson S. .

JOURNAL OF APPLIED PHYSICS, 2007, 102 (01)

[7]

Lampert M. A., 1970, CURRENT INJECTION SO

[8] Dopant-free GaN/AlN/AlGaN radial nanowire heterostructures as high electron mobility transistors [J].

Li, Yat ;

Xiang, Jie ;

Qian, Fang ;

Gradecak, Silvija ;

Wu, Yue ;

Yan, Hao ;

Blom, Douglas A. ;

Lieber, Charles M. .

NANO LETTERS, 2006, 6 (07) :1468-1473

[9] Luminescence from defects in GaN [J].

Reshchikov, MA ;

Morkoç, H .

PHYSICA B-CONDENSED MATTER, 2006, 376 :428-431

[10] Space charge limited currents and trap concentrations in GaAs nanowires [J].

Schricker, April D. ;

Davidson, Forrest M., III ;

Wiacek, Robert J. ;

Korgel, Brian A. .

NANOTECHNOLOGY, 2006, 17 (10) :2681-2688

← 1 2 →