Improved degradation stability of blue-green II-VI light-emitting diodes with excluded nitrogen-doped ZnSe-based layers

被引：8

作者：

Gordeev, NY

Ivanov, SV

Kopchatov, VI

Novikov, II

Shubina, TV

Il'inskaya, ND

Kop'ev, PS

Reuscher, G

Waag, A

Landwehr, G

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

[2] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[3] Univ Ulm, Abt Halbleiterphys, D-89081 Ulm, Germany

来源：

SEMICONDUCTORS | 2001年 / 35卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

Active Region; Magnetic Material; Electromagnetism; BeTe; Hole Injector;

D O I：

10.1134/1.1418083

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Degradation characteristics of p-i-n BeZnSe/Zn(Be)CdSe light-emitting diodes were investigated. Undoped short-period superlattices, which provide efficient hole transport from the p(+)-BeTe:N near-contact region (hole injector) into the active region, were used instead of the p-doped BeZnSe:N emitter. It is demonstrated that this makes it possible to considerably lengthen the operating life of the light-emitting diodes at highest direct current densities (similar to4.5 kA/cm(2)) at room temperature. (C) 2001 MAIK "Nauka/ Interperiodica".

引用

收藏

页码：1340 / 1344

页数：5

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