High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer.

被引：2

作者：

Bin Taher, Md Iktiham ^{[1
]}

Halfaya, Yacine ^{[2
]}

Alrammouz, Rouba ^{[1
]}

Lazerges, Mathieu ^{[1
]}

Randi, Aurelien ^{[1
]}

Moudakir, Tarik ^{[2
]}

Sama, Nossikpendou Yves ^{[2
]}

Guermont, Thomas ^{[3
]}

Pelissier, Nicolas ^{[3
]}

Pichler, Thomas ^{[4
]}

Piedevache, Mederic ^{[4
]}

Pironon, Jacques ^{[1
]}

Gautier, Simon ^{[2
]}

机构：

[1] Univ Lorraine, CREGU, GeoRessources Lab, UMR 7359,CNRS, F-54506 Vandoeuvre Les Nancy, France

[2] Lafayette Inst, 2 Rue Marconi, F-57070 Metz, France

[3] 45 8 Energy, 4 Rue Francois Curel, F-57000 Metz, France

[4] Solexperts, Technopole Nancy Brabois, F-54500 Vandoeuvre les Nancy, France

来源：

2021 IEEE SENSORS | 2021年

关键词：

Field-effect transistor; ITO; AlGaN; GaN; HEMT; gas sensor; OXIDE THIN-FILM; GAS;

D O I：

10.1109/SENSORS47087.2021.9639820

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gas sensors based on AlGaN/GaN high-electronmobility transistors (HEMTs) with indium tin oxide (ITO) gates as functional layers were fabricated to detect hydrogen gas. Several sensing metrics such as the changes in current, sensitivity, and response time confirmed the dependence of the sensing response on the gas concentration.

引用

页数：4

共 18 条

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