Plasmon-pole approximation for semiconductor quantum-wire electrons

被引：26
作者：
DasSarma, S
Hwang, EH
Zheng, L
机构：
[1] Department of Physics, University of Maryland, College Park
来源：
PHYSICAL REVIEW B | 1996年 / 54卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.54.8057
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We develop the plasmon-pole approximation for an interacting electron gas confined in a semiconductor quantum wire. We argue that the plasmon-pole approximation becomes a more accurate approach in quantum-wire systems than in higher-dimensional systems because of severe phase-space restrictions on particle-hole excitations in one dimension. As examples, we use the plasmon-pole approximation to calculate the electron self-energy due to the Coulomb interaction and the hot-electron energy relaxation rate due to LO-phonon emission in GaAs quantum wires. We find that the plasmon-pole approximation works extremely well as compared with more complete many-body calculations.
引用
收藏
页码：8057 / 8063
页数：7
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