Electrochemical deposition of Cl-doped n-type Cu2O on reduced graphene oxide electrodes

被引：87

作者：

Wu, Shixin ^{[1
]}

Yin, Zongyou ^{[1
]}

He, Qiyuan ^{[1
]}

Lu, Gang ^{[1
]}

Zhou, Xiaozhu ^{[1
]}

Zhang, Hua ^{[1
,2
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Ctr Biomimet Sensor Sci, Singapore 637553, Singapore

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 10期

关键词：

POLYMER MEMORY DEVICES; SOLAR-CELLS; CUPROUS-OXIDE; FILMS; COPPER; TRANSPARENT; NANOPARTICLES; FABRICATION; REDUCTION;

D O I：

10.1039/c0jm02267e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Reduced graphene oxide (rGO) electrodes can be applied for the electrochemical deposition of various semiconductor oxides. In this study, we demonstrate the electrochemical deposition of Cl-doped n-type Cu2O (Cl-Cu2O) on rGO electrodes. The structure and properties of the deposited Cl-Cu2O have been investigated extensively. Moreover, the effect of Cl doping on the carrier concentration and photocurrent of Cl-Cu2O has also been investigated. Our study shows significant implications in tailoring the properties of materials deposited on rGO electrodes by using electrochemical methods.

引用

页码：3467 / 3470

页数：4

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