Electrochemical deposition of Cl-doped n-type Cu2O on reduced graphene oxide electrodes

被引:87
作者
Wu, Shixin [1 ]
Yin, Zongyou [1 ]
He, Qiyuan [1 ]
Lu, Gang [1 ]
Zhou, Xiaozhu [1 ]
Zhang, Hua [1 ,2 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Ctr Biomimet Sensor Sci, Singapore 637553, Singapore
关键词
POLYMER MEMORY DEVICES; SOLAR-CELLS; CUPROUS-OXIDE; FILMS; COPPER; TRANSPARENT; NANOPARTICLES; FABRICATION; REDUCTION;
D O I
10.1039/c0jm02267e
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Reduced graphene oxide (rGO) electrodes can be applied for the electrochemical deposition of various semiconductor oxides. In this study, we demonstrate the electrochemical deposition of Cl-doped n-type Cu2O (Cl-Cu2O) on rGO electrodes. The structure and properties of the deposited Cl-Cu2O have been investigated extensively. Moreover, the effect of Cl doping on the carrier concentration and photocurrent of Cl-Cu2O has also been investigated. Our study shows significant implications in tailoring the properties of materials deposited on rGO electrodes by using electrochemical methods.
引用
收藏
页码:3467 / 3470
页数:4
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