Low-power three-path inductor class-C VCO without any dynamic bias circuit

被引：11

作者：

Jang, Sheng-Lyang ^{[1
]}

Lin, Yan-Cu ^{[1
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei, Taiwan

来源：

ELECTRONICS LETTERS | 2017年 / 53卷 / 17期

关键词：

low-power electronics; inductors; voltage-controlled oscillators; Q-factor; resonators; MOSFET; power consumption; phase noise; BiCMOS integrated circuits; Ge-Si alloys; SiGe; size; 0; 18; mum; power; 24; mW; voltage; 1; 2; V; frequency; 48; GHz; BiCMOS process; TSMC standard; figure of merit; core power consumption; dc current reuse; direct cross-coupled pMOSFET; high dc-RF conversion efficiency; class-C cross-coupled nMOSFET pairs; low loss resonator; three-path high Q-factor inductor; voltage controlled oscillator; dynamic back bias circuit; class-C VCO; low-power three-path inductor; AMPLITUDE FEEDBACK LOOP; DESIGN;

D O I：

10.1049/el.2017.1845

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2.48 GHz class-C voltage controlled oscillator (VCO) without any dynamic back bias circuit is presented. The VCO uses three-path high Q-factor inductor as the low loss resonator and class-C cross-coupled nMOSFET pairs for high dc/RF conversion efficiency and direct cross-coupled pMOSFET for dc current reuse. At the supply voltage of 1.2 V, the core power consumption is 0.24 mW. The phase noise of the VCO is -124 dBc/Hz and the VCO figure of merit is -197.0 dBc/Hz. The VCO was implemented in the TSMC standard 0.18 m SiGe BiCMOS process and occupies a die area of 0.799 x 0.809 mm(2).

引用

页码：1186 / 1188

页数：2

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