Characterization of a-Si:H TFTs with Various Phosphorus Concentrations in a-SiN:H Layer

被引：0

作者：

Kim, Jun-Woo ^{[1
]}

Kim, Byung-Ju ^{[1
]}

Sohn, Young-Soo ^{[2
]}

Choi, Sie-Young ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

[2] Catholic Univ Daegu, Gyongsan, Gyeongbuk, South Korea

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2010年 / 532卷

关键词：

a-Si:H TFT; a-SiN:H; mobility; phosphorus doping; FILM;

D O I：

10.1080/15421406.2010.497055

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Characteristics of hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) with various phosphorus doping concentrations in a-SiN:H layer have been investigated. The a-Si:H TFTs with a heterostructure of the phosphorus-contained a-SiN:H and intrinsic a-Si:H layers have been fabricated by a plasma enhanced chemical vapor deposition using SiH4, PH3, and NH3 gases. The mobility, the threshold and the surface roughness of the devices have been investigated and compared with the conventional amorphous silicon thin film transistors.

引用

页码：535 / 542

页数：8

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