Defect induced ferromagnetism in carbon-doped ZnO thin films

被引：65

作者：

Akbar, Sadaf ^{[1
]}

Hasanain, S. K. ^{[1
]}

Abbas, Manzar ^{[2
]}

Ozcan, S. ^{[3
]}

Ali, B. ^{[4
]}

Shah, S. Ismat ^{[4
,5
]}

机构：

[1] Quaid I Azam Univ, Dept Phys, Islamabad, Pakistan

[2] CIIT Ctr Hlth Res, Dept Phys, Islamabad, Pakistan

[3] Hacettepe Univ, Dept Engn Phys, TR-06800 Ankara, Turkey

[4] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

[5] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA

来源：

SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 01期

关键词：

Thin films; Semiconductor; Point defects; Grain boundaries;

D O I：

10.1016/j.ssc.2010.10.035

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation Magnetization Hall effect X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO The samples were observed to have n-type conduction with the carrier concentration increasing with C doping XPS does not give any evidence for C substituted at the O site and is more consistent with the formation of C-O bonds and with the presence of C primarily in the +4 state It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C4+) (C) 2010 Elsevier Ltd All rights reserved

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页码：17 / 20

页数：4

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