Defect induced ferromagnetism in carbon-doped ZnO thin films

被引：65
|
作者：
Akbar, Sadaf [1 ]
Hasanain, S. K. [1 ]
Abbas, Manzar [2 ]
Ozcan, S. [3 ]
Ali, B. [4 ]
Shah, S. Ismat [4 ,5 ]
机构：
[1] Quaid I Azam Univ, Dept Phys, Islamabad, Pakistan
[2] CIIT Ctr Hlth Res, Dept Phys, Islamabad, Pakistan
[3] Hacettepe Univ, Dept Engn Phys, TR-06800 Ankara, Turkey
[4] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
[5] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
来源：
SOLID STATE COMMUNICATIONS | 2011年 / 151卷 / 01期
关键词：
Thin films; Semiconductor; Point defects; Grain boundaries;
D O I：
10.1016/j.ssc.2010.10.035
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on room temperature ferromagnetism in C-doped ZnO thin films prepared by electron beam evaporation Magnetization Hall effect X-ray photoemission spectroscopy (XPS) and X-ray diffraction studies have been conducted to investigate the source and nature of ferromagnetism in C-doped ZnO The samples were observed to have n-type conduction with the carrier concentration increasing with C doping XPS does not give any evidence for C substituted at the O site and is more consistent with the formation of C-O bonds and with the presence of C primarily in the +4 state It is suggested that the ferromagnetism originates in the development of Zn vacancies that are stabilized due to the incorporation of C in a high valence state (C4+) (C) 2010 Elsevier Ltd All rights reserved
引用
收藏
页码：17 / 20
页数：4
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