Study on two-dimensional analytical models for symmetrical gate stack dual gate strained silicon MOSFETs

被引：4

作者：

Li Jin ^{[1
]}

Liu Hong-Xia ^{[1
]}

Li Bin ^{[1
]}

Cao Lei ^{[1
]}

Yuan Bo ^{[1
]}

机构：

[1] Xidian Univ, Key Lab Wide Bandgap Semicond Devices, Minist Educ, Sch Microelect, Xian 710071, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 10期

基金：

中国国家自然科学基金;

关键词：

strained-Si; gate stack double-gate MOSFETs; short channel effect; the drain-induced barrier-lowering; THRESHOLD-VOLTAGE MODEL; SOI; TECHNOLOGY; CHANNEL; SI;

D O I：

10.1088/1674-1056/19/10/107302

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Based on the exact resultant solution of two-dimensional Poisson's equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime.

引用

页数：7

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