The influence of nitrogen addition on the morphology, growth rate, and Raman spectra of combustion grown diamond

被引:15
作者
Wolden, CA [1 ]
Draper, CE
Sitar, Z
Prater, JT
机构
[1] Colorado Sch Mines, Dept Chem Engn, Golden, CO 80401 USA
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[3] USA, Res Off, Res Triangle Pk, NC 27709 USA
关键词
nitrogen; combustion synthesis; texture; Raman;
D O I
10.1016/S0925-9635(98)00172-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of intentional nitrogen addition on diamond deposition using a low pressure acetylene-oxygen flat flame was studied. The film morphology was assessed by scanning electron microscopy, growth rates by cross-section thickness measurements, and nitrogen incorporation by Raman spectroscopy. It was found that the addition of nitrogen increased the growth parameter alpha, and for the conditions investigated [100] textured films were obtained for nitrogen levels between three and five parts per thousand (ppt). It was found that there was no change in growth rate over the range 0-7 ppt N-2 addition. At higher levels the films became amorphous. For low levels (<5 ppt) the luminescence signal in the Raman spectra increased steadily with nitrogen addition, while the features associated with sp(2) and sp(3) bonded carbon were unchanged. Comparisons with natural diamond and hot-filament grown material demonstrate that nitrogen is a significant impurity in our acetylene source. Equilibrium calculations showed that NO and atomic nitrogen were the two dominant products that may be responsible for the observed changes in morphology and Raman spectra. (C) 1998 Elsevier Science S.A.
引用
收藏
页码:1178 / 1183
页数:6
相关论文
共 22 条
[1]   SYNTHESIS OF DIAMOND FROM METHANE AND NITROGEN MIXTURE [J].
BADZIAN, A ;
BADZIAN, T ;
LEE, ST .
APPLIED PHYSICS LETTERS, 1993, 62 (26) :3432-3434
[2]   RAMAN AND PHOTOLUMINESCENCE ANALYSIS OF STRESS STATE AND IMPURITY DISTRIBUTION IN DIAMOND THIN-FILMS [J].
BERGMAN, L ;
NEMANICH, RJ .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) :6709-6719
[3]   Influence of nitrogen additions on hot-filament chemical vapor deposition of diamond [J].
Bohr, S ;
Haubner, R ;
Lux, B .
APPLIED PHYSICS LETTERS, 1996, 68 (08) :1075-1077
[4]   THE DEPOSITION OF DIAMOND FILMS BY FILAMENT TECHNIQUES [J].
JANSEN, F ;
MACHONKIN, MA ;
KUHMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (05) :3785-3790
[5]   EFFECT OF NITROGEN ON THE GROWTH OF DIAMOND FILMS [J].
JIN, S ;
MOUSTAKAS, TD .
APPLIED PHYSICS LETTERS, 1994, 65 (04) :403-405
[6]  
KEE RJ, 1994, 878251B SAND SAND NA
[7]   NITROGEN STABILIZED (100) TEXTURE IN CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS [J].
LOCHER, R ;
WILD, C ;
HERRES, N ;
BEHR, D ;
KOIDL, P .
APPLIED PHYSICS LETTERS, 1994, 65 (01) :34-36
[8]   GROWTH OF DIAMOND FILMS USING AN ENCLOSED COMBUSTION-FLAME [J].
MORRISON, PW ;
SOMASHEKHAR, A ;
GLASS, JT ;
PRATER, JT .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) :4144-4156
[9]  
MullerSebert W, 1996, APPL PHYS LETT, V68, P759, DOI 10.1063/1.116733
[10]   CONTROLLED DEPOSITION OF DIAMOND FROM AN ACETYLENE OXYGEN COMBUSTION FLAME [J].
SCHERMER, JJ ;
HOGENKAMP, JEM ;
OTTER, GCJ ;
JANSSEN, G ;
VANENCKEVORT, WJP ;
GILING, LJ .
DIAMOND AND RELATED MATERIALS, 1993, 2 (08) :1149-1155