Graphene-based vertical-junction diodes and applications

被引：15
作者：
Choi, Suk-Ho [1 ,2 ]
机构：
[1] Kyung Hee Univ, Coll Appl Sci, Dept Appl Phys, Yongin 17104, South Korea
[2] Kyung Hee Univ, Coll Appl Sci, Inst Nat Sci, Yongin 17104, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2017年 / 71卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
Graphene; Vertical-junction; Tunneling diodes; Schottky diodes; Photodetectors; Solar cells; Sensors; Resonant tunneling; HETEROJUNCTION SOLAR-CELLS; POROUS SILICON; QUANTUM CONFINEMENT; WORK FUNCTION; HETEROSTRUCTURES; NANOCRYSTALS; NANORIBBONS; SCIENCE; ROADMAP; DOTS;
D O I：
10.3938/jkps.71.311
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In the last decade, graphene has received extreme attention as an intriguing building block for electronic and photonic device applications. This paper provides an overview of recent progress in the study of vertical-junction diodes based on graphene and its hybrid systems by combination of graphene and other materials. The review is especially focused on tunnelling and Schottky diodes produced by chemical doping of graphene or combination of graphene with various semiconducting/ insulating materials such as hexagonal boron nitrides, Si-quantum-dots-embedded SiO2 multilayers, Si wafers, compound semiconductors, Si nanowires, and porous Si. The uniqueness of graphene enables the application of these convergence structures in high-efficient devices including photodetectors, solar cells, resonant tunnelling diodes, and molecular/DNA sensors.
引用
收藏
页码：311 / 318
页数：8
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