HgCdTe infrared detectors - historical prospect

HgCdTe infrared (IR) detectors have been intensively developed since the first synthesis of this ternary alloy in 1958. The paper summarizes the fundamental properties of this versatile alloy, and relates the material properties to its successful applications as an IR photoconductive and photovoltaic detector material. An emphasize is put on key developments in the crystal growth and their influence on device evolution. Recent advances of backside illuminated HgCdTe heterojunction photodiodes have enabled third generation of multispectral instruments for remote sensing applications and have led to the practicality of multiband IR focal plane array technology.