The dose mapping system for the electromagnetic calorimeter of the BaBar experiment at SLAC

被引:16
作者
Camanzi, B [1 ]
Holmes-Siedle, AG [1 ]
McKemey, AK [1 ]
机构
[1] Brunel Univ, Dept Elect & Comp Engn, Sensors Instrumentat & Radiat Effects Grp, Uxbridge UB8 3PH, Middx, England
关键词
electromagnetic calorimetry; dose mapping; metal-oxide-semiconductor dosimeter; RadFET;
D O I
10.1016/S0168-9002(00)00779-8
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
An array of 116 p-channel radiation-sensitive MOSFET transistors (RadFETs) has been commissioned for the BaBar experiment at the PEP-II accelerator at the Stanford Linear Accelerator Center (SLAC). The aim of this system is to map the integrated dose absorbed by different regions of the calorimeter during the course of the experiment. This paper reports the design, characterization and installation of the sensors and briefly describes the readout system designed by co-workers. The response at low doses and the temperature coefficient for 130RadFETs has been determined. At a "read" current of 160 muA an average shift in voltage of 51 +/- 4 mV was measured at an integrated dose of 30 rad with a temperature coefficient of 2.3 +/- 0.3 mV/degreesC. Calibration for high doses is also described. The system provides a novel method for real-time measurements of the spatial distribution of ionizing radiation dose within a large particle physics experiment. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:476 / 486
页数:11
相关论文
共 19 条
[1]  
AVLET M, 1993, RADECS 93, P27
[2]  
*BAB COLL, 1995, SLACR95457 BAB COLL
[3]   PMOS DOSIMETERS - LONG-TERM ANNEALING AND NEUTRON RESPONSE [J].
BLAMIRES, NG ;
TOTTERDELL, DHJ ;
HOLMES-SIEDLE, AG ;
ADAMS, L .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1310-1315
[4]   Thermal annealing and optical darkening effects in CsI(Tl) crystals [J].
Chowdhury, MAH ;
Imrie, DC .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 432 (01) :138-146
[5]   Studies of radiation tolerance and optical absorption bands of CsI(Tl) crystals [J].
Chowdhury, MAH ;
Watts, SJ ;
Imrie, DC ;
McKemey, AK ;
Holmes-Siedle, AG .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1999, 432 (01) :147-156
[6]   ESTIMATING OXIDE-TRAP, INTERFACE-TRAP, AND BORDER-TRAP CHARGE-DENSITIES IN METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J].
FLEETWOOD, DM ;
SHANEYFELT, MR ;
SCHWANK, JR .
APPLIED PHYSICS LETTERS, 1994, 64 (15) :1965-1967
[7]  
HASAN A, 1997, 381 SLAC BAB
[8]  
HOLMESSIEDLE A, 1986, RADIAT PHYS CHEM, V28, P235
[9]   THE MECHANISMS OF SMALL INSTABILITIES IN IRRADIATED MOS-TRANSISTORS [J].
HOLMESSIEDLE, A ;
ADAMS, L .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4135-4140
[10]  
HOLMESSIEDLE AG, 1999, RADECS 91, P65