Passivation and Electrical Properties of Alumina Layers Deposited by Atomic-Layer Deposition with Different Precursors

被引：2
作者：
Kolkovsky, Vladimir [1 ]
Lange, Nicolas [2 ]
机构：
[1] Fraunhofer IPMS, MT, Maria Reiche Str 2, D-01109 Dresden, Germany
[2] Fraunhofer IPMS, ENV, Maria Reiche Str 2, D-01109 Dresden, Germany
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2022年 / 219卷 / 17期
关键词：
Al2O3; ALD growth; C-V; defects; effective minority carrier lifetime; surface recombination velocity; OXIDE THIN-FILMS; AL2O3; SILICON; GROWTH; OZONE; SI; TRIMETHYLALUMINUM; TEMPERATURE; EPITAXY;
D O I：
10.1002/pssa.202200138
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical and passivation properties of alumina layers deposited by the atomic layer deposition (ALD) technique with different precursors at different temperatures are analyzed. Herein, a significantly larger density of the negative fixed charge in alumina layers deposited with ozone in comparison to those prepared with water is observed. A part of this negative charge can be successfully removed by the annealing of the samples already at around 250 degrees C and this negative charge is tentatively ascribed to oxygen interstitials. The effective surface recombination velocity (s (eff)) is below 2 cm s(-1) in all as-deposited alumina layers independent of the deposition conditions and it is significantly smaller in layers prepared with water. The higher s (eff) in films prepared with ozone can be explained by the higher density of the interface states in these samples as obtained from impedance measurements performed at different ac frequencies and at different biases. The conduction mechanisms in alumina films are also investigated and their difference is discussed.
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页数：6
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共 35 条
[1]   Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge [J].
Agostinelli, G. ;
Delabie, A. ;
Vitanov, P. ;
Alexieva, Z. ;
Dekkers, H. F. W. ;
De Wolf, S. ;
Beaucarne, G. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :3438-3443
[2]   Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3 [J].
Black, Lachlan E. ;
McIntosh, Keith R. .
APPLIED PHYSICS LETTERS, 2012, 100 (20)
[3]   Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone [J].
Cheng, Lanxia ;
Qin, Xiaoye ;
Lucero, Antonio T. ;
Azcatl, Angelica ;
Huang, Jie ;
Wallace, Robert M. ;
Cho, Kyeongjae ;
Kim, Jiyoung .
ACS APPLIED MATERIALS & INTERFACES, 2014, 6 (15) :11834-11838
[4]   A small-gap electrostatic micro-actuator for large deflections [J].
Conrad, Holger ;
Schenk, Harald ;
Kaiser, Bert ;
Langa, Sergiu ;
Gaudet, Matthieu ;
Schimmanz, Klaus ;
Stolz, Michael ;
Lenz, Miriam .
NATURE COMMUNICATIONS, 2015, 6
[5]   The origin of negative charging in amorphous Al2O3 films: the role of native defects [J].
Dicks, Oliver A. ;
Cottom, Jonathon ;
Shluger, Alexander L. ;
Afanas'ev, Valeri V. .
NANOTECHNOLOGY, 2019, 30 (20)
[6]   ELECTRICAL-PROPERTIES OF SI-AL2O3 STRUCTURES GROWN BY ML-ALE [J].
DROZD, VE ;
BARABAN, AP ;
NIKIFOROVA, IO .
APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) :583-586
[7]   Ozone-based atomic layer deposition of alumina from TMA: Growth, morphology, and reaction mechanism [J].
Elliott, S. D. ;
Scarel, G. ;
Wiemer, C. ;
Fanciulli, M. ;
Pavia, G. .
CHEMISTRY OF MATERIALS, 2006, 18 (16) :3764-3773
[8]   Properties of Al2O3-films deposited on silicon by atomic layer epitaxy [J].
Ericsson, P ;
Bengtsson, S ;
Skarp, J .
MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) :91-94
[9]   SELF-LIMITING BEHAVIOR OF THE GROWTH OF AL2O3 USING SEQUENTIAL VAPOR PULSES OF TMA AND H2O2 [J].
FAN, JF ;
TOYODA, K .
APPLIED SURFACE SCIENCE, 1992, 60-1 :765-769
[10]   Al2O3 Atomic Layer Deposition with Trimethylaluminum and Ozone Studied by in Situ Transmission FTIR Spectroscopy and Quadrupole Mass Spectrometry [J].
Goldstein, David N. ;
McCormick, Jarod A. ;
George, Steven M. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (49) :19530-19539
1234