Performance improvement in silicon arrayed waveguide grating by suppression of scattering near the boundary of a star coupler

被引:25
作者
Park, Jaegyu [1 ]
Kim, Gyungock [1 ]
Park, Hyundai [1 ]
Joo, Jiho [1 ]
Kim, Sanggi [1 ]
Kwack, Myung-Joon [1 ]
机构
[1] Elect & Telecommun Res Inst, Taejon 305350, South Korea
关键词
CMOS TECHNOLOGY; NANOWIRE AWG;
D O I
10.1364/AO.54.005597
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We investigate the reduction of transition loss across the star coupler boundary in a silicon arrayed waveguide grating (AWG) by suppressing multimode generation and scattering near the boundary of a star coupler. Eight-channel silicon AWGs were designed with optimal conditions based on enhanced field matching in combination with ultrashallow etched structures. The fabricated AWG demonstrates an insertion loss down to 0.63 dB with a cross talk of -23 to -25.3 dB, exhibiting similar to 0.8 dB improvement of insertion loss and similar to 4 dB improvement of cross talk compared to the Si AWG fabricated with a conventional double-etch technique. (C) 2015 Optical Society of America
引用
收藏
页码:5597 / 5602
页数:6
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