0.532-μm laser conditioning of HfO2/SiO2 third harmonic separator fabricated by electron-beam evaporation

被引：0
|
作者：
Li, Dawei [1 ,2 ]
Zhao, Yuan'an [1 ]
Shao, Jianda [1 ]
Fan, Zhengxiu [1 ]
He, Hongbo [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
来源：
CHINESE OPTICS LETTERS | 2008年 / 6卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The 0.532-mu m laser conditioning of HfO2/SiO2 third harmonic separator fabricated by electron-beam evaporation (EBE) was studied. The laser induced damage threshold (LIDT) of the separator determined by 1-on-1 test is 9.1 J/cm(2) and it is 15.2 J/cm(2) after laser conditioning determined by raster scanning. Two kinds of damage morphologies, taper pits and flat bottom pits, are found on the sample surface and they show different damage behaviors. The damage onset of taper pits does not change obviously and the laser conditioning effect is contributed to the flat bottom pits, which limits the application of laser conditioning.
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页码：386 / 387
页数：2
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