Long-lived excited state of Te donors in GaP

被引：2

作者：

Pokrovskii, YE ^{[1
]}

Smirnova, OI ^{[1
]}

Khval'kovskii, NA ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 103907, Russia

来源：

JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS | 1998年 / 87卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.558613

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The kinetics of the photoresponses in constant and microwave electric fields and the variation of the absorption of background radiation in GaP doped with Te (2 X 10(17) cm(-3)) upon impurity excitation at 5-50 K are investigated. The lifetime of the excited state of the Te donors is determined (similar to 10(-2) s). It is shown that the results presented are consistent with the model of carrier accumulation in long-lived impurity excited states in semiconductors. These results are compared with the results previously obtained for diamond-structure semiconductors. (C) 1998 American Institute of Physics. [S1063-7761(98)02412-3].

引用

页码：1201 / 1204

页数：4

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