Selective wet etching of lattice-matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid hydrogen peroxide solution (vol 14, pg 3400, 1996)

被引：1
|
作者：
Fourre, H
Diette, F
Cappy, A
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期
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D O I：
10.1116/1.588734
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：3603 / 3603
页数：1
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    Fourre, H
    Diette, F
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    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (05): : 3400 - 3402
  • [2] Erratum: selective wet etching of lattice-matched InGaAs/InAlAs on InP and metamorphic InGaAs/InAlAs on GaAs using succinic acid/hydrogen peroxide solution [J. Vac. Sci. Technol. B 14, 3400 (1996)]
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