Bottom-up approach to silicon nanoelectronics

被引：12

作者：

Mizuta, Hiroshi ^{[1
,2
,3
]}

Oda, Shunri ^{[1
,2
,3
]}

机构：

[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[3] SORST JST, Tokyo, Japan

来源：

MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 02期

关键词：

silicon; quantum dot; nanoelectronics;

D O I：

10.1016/j.mejo.2006.10.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon-based nanoelectronics. We discuss fabrication technique, electronic properties, and device applications of silicon nanodots as a building block for various nanoscale silicon devices. (C) 2006 Published by Elsevier Ltd.

引用

页码：171 / 176

页数：6

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