Bottom-up approach to silicon nanoelectronics

被引：12
|
作者：
Mizuta, Hiroshi [1 ,2 ,3 ]
Oda, Shunri [1 ,2 ,3 ]
机构：
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[3] SORST JST, Tokyo, Japan
来源：
MICROELECTRONICS JOURNAL | 2008年 / 39卷 / 02期
关键词：
silicon; quantum dot; nanoelectronics;
D O I：
10.1016/j.mejo.2006.10.007
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon-based nanoelectronics. We discuss fabrication technique, electronic properties, and device applications of silicon nanodots as a building block for various nanoscale silicon devices. (C) 2006 Published by Elsevier Ltd.
引用
收藏
页码：171 / 176
页数：6
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