On the magnetic properties of Gd implanted GaN

被引：26

作者：

Hejtmanek, J. ^{[1
]}

Knizek, K. ^{[1
]}

Marysko, M. ^{[1
]}

Jirak, Z. ^{[1
]}

Sedmidubsky, D. ^{[2
]}

Sofer, Z. ^{[2
]}

Perina, V. ^{[3
]}

Hardtdegen, H. ^{[4
]}

Buchal, C. ^{[4
]}

机构：

[1] ASCR, Inst Phys, Prague 16253, Czech Republic

[2] Inst Chem Technol, CR-16628 Prague, Czech Republic

[3] ASCR, Inst Nucl Phys, Rez, Czech Republic

[4] Forschungszentrum Julich, Inst Bionanosyst, D-52425 Julich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.2830644

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The wurzite type gallium nitride doped by gadolinium, Ga(1-x)Gd(x)N (x similar to 0.01-0.07), was prepared by Gd ion implantation of the parent GaN thin films deposited on sapphire substrates. The material obtained exhibits a weak ferromagnetism (FM) persisting up to 700 K. At higher Gd concentrations, the minute FM component coexists with much more pronounced Curie-type paramagnetism. In a dilute limit (x <= 0.01), the latter part is substantially reduced and the saturated FM moment reaches the value M similar to 2 mu(B)/Gd atom.

引用

页数：3

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