Band gap anomalies of the ZnM2IIIO4 (MIII = Co, Rh, Ir) spinels

被引:64
作者
Scanlon, David O. [1 ]
Watson, Graeme W.
机构
[1] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland
基金
爱尔兰科学基金会;
关键词
MAGNETIC SEMICONDUCTOR ZNCO2O4; ELECTRONIC-STRUCTURE; ELECTRICAL-CONDUCTION; CUPROUS DELAFOSSITES; DEFECT MECHANISMS; ANODE MATERIAL; THIN-FILMS; OXIDE; TRANSPORT; STATE;
D O I
10.1039/c0cp02562c
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Development of high figure-of-merit p-type transparent conducting oxides has become a global research goal. (ZnM2O4)-O-III (M-III = Co, Rh, Ir) spinels have been identified as potential p-type materials, with ZnIr2O4 reported to be a transparent conducting oxide. In this article the geometry and electronic structure of (ZnM2O4)-O-III are studied using the Perdew-Purke-Ernzerhof generalized gradient approximation (PBE-GGA) to density functional theory and a hybrid density functional, HSE06. The valence band features of all the spinels indicate that they are not conducive to high p-type ability, as there is insufficient dispersion at the valence band maxima. The trend of increasing band-gap as the atomic number of the M-III cation increases, as postulated from ligand field theory, is not reproduced by either level of theory, and indeed is not seen experimentally in the literature. GGA underestimates the band-gaps of these materials, while HSE06 severely overestimates the band-gaps. The underestimation (overestimation) of the band-gaps by GGA (HSE06) and the reported transparency of ZnIr2O4 is discussed.
引用
收藏
页码:9667 / 9675
页数:9
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