Photoelectric properties of ordered-vacancy Ga2Se3 single crystals

被引：10

作者：

Bletskan, D. I. ^{[1
]}

Kabatsii, V. N. ^{[2
]}

Kranjcec, M. ^{[3
]}

机构：

[1] Uzhgorod Natl Univ, UA-88000 Uzhgorod, Ukraine

[2] Mukachevo Inst Technol, UA-89600 Mukachevo, Ukraine

[3] Univ Zagreb, Dept Geotech Engn, Varazhdin 42000, Croatia

来源：

INORGANIC MATERIALS | 2010年 / 46卷 / 12期

关键词：

Cation Vacancy; Photoelectric Property; Luminous Flux; Thermally Stimulate Current; Native Point Defect;

D O I：

10.1134/S0020168510120034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the photoconductivity spectrum, thermally stimulated current, current-light characteristics, and temperature-dependent photocurrent in Bridgman-grown ordered-vacancy Ga2Se3 crystals. The observed temperature quenching of photoconductivity and two regions of its thermal activation in Ga2Se3 crystals are interpreted in terms of a multicenter recombination model which incorporates an s-channel of active recombination, r-centers of photosensitivity, and traps for nonequilibrium majority carriers.

引用

页码：1290 / 1295

页数：6