Photoelectric properties of ordered-vacancy Ga2Se3 single crystals

被引：10
|
作者：
Bletskan, D. I. [1 ]
Kabatsii, V. N. [2 ]
Kranjcec, M. [3 ]
机构：
[1] Uzhgorod Natl Univ, UA-88000 Uzhgorod, Ukraine
[2] Mukachevo Inst Technol, UA-89600 Mukachevo, Ukraine
[3] Univ Zagreb, Dept Geotech Engn, Varazhdin 42000, Croatia
来源：
INORGANIC MATERIALS | 2010年 / 46卷 / 12期
关键词：
Cation Vacancy; Photoelectric Property; Luminous Flux; Thermally Stimulate Current; Native Point Defect;
D O I：
10.1134/S0020168510120034
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the photoconductivity spectrum, thermally stimulated current, current-light characteristics, and temperature-dependent photocurrent in Bridgman-grown ordered-vacancy Ga2Se3 crystals. The observed temperature quenching of photoconductivity and two regions of its thermal activation in Ga2Se3 crystals are interpreted in terms of a multicenter recombination model which incorporates an s-channel of active recombination, r-centers of photosensitivity, and traps for nonequilibrium majority carriers.
引用
收藏
页码：1290 / 1295
页数：6
相关论文
共 22 条
  • [1] Photoelectric properties of ordered-vacancy Ga2Se3 single crystals
    D. I. Bletskan
    V. N. Kabatsii
    M. Kranjčec
    Inorganic Materials, 2010, 46 : 1290 - 1295
  • [2] Photoelectric properties of TlIn 1 - X Pr x Se 2 (0 ≤ x ≤ 0.04) single crystals
    Gojaev E.M.
    Jafarova G.S.
    Inorganic Materials, 2009, 45 (11) : 1234 - 1236
  • [3] Radiative and photoelectric properties of CuInS2 single crystals
    Ivanov, VA
    Viktorov, IA
    Gremenok, VF
    TECHNICAL PHYSICS, 2002, 47 (09) : 1197 - 1198
  • [4] Radiative and photoelectric properties of CuInS2 single crystals
    V. A. Ivanov
    I. A. Viktorov
    V. F. Gremenok
    Technical Physics, 2002, 47 : 1197 - 1198
  • [5] Fabrication and photoelectric properties of the ZnO-Cu(In,Ga)Se2 heterojunctions
    V. F. Gremenok
    G. A. Il’chuk
    S. E. Nikitin
    V. Yu. Rud’
    Yu. V. Rud’
    Semiconductors, 2005, 39 : 202 - 205
  • [6] Photoelectric properties of TlIn0.98Pr0.02Se2 crystals and resistors
    E. M. Gojaev
    A. M. Nazarov
    E. A. Allakhyarov
    Inorganic Materials, 2011, 47 : 1311 - 1313
  • [7] Photoelectric properties of TlIn0.98Pr0.02Se2 crystals and resistors
    Gojaev, E. M.
    Nazarov, A. M.
    Allakhyarov, E. A.
    INORGANIC MATERIALS, 2011, 47 (12) : 1311 - 1313
  • [8] Photoelectric properties of Se-doped Cd1.23Zn1.77As2 crystals
    A. I. Belogorokhov
    I. S. Zakharov
    A. F. Knyazev
    A. V. Kochura
    Inorganic Materials, 2000, 36 : 653 - 656
  • [9] Photoelectric properties of Se-doped Cd1.23Zn1.77As2 crystals
    Belogorokhov, AI
    Zakharov, IS
    Knyazev, AF
    Kochura, AV
    INORGANIC MATERIALS, 2000, 36 (07) : 653 - 656
  • [10] Optical and photoelectric properties of Cd1-xZnAS2 single crystals
    Morozova, VA
    Marenkin, SF
    Mikhailov, SG
    Koshelev, OG
    INORGANIC MATERIALS, 2005, 41 (03) : 212 - 216
123