Growth and Characterization of Indium Doped Zinc Oxide Films Sputtered from Powder Targets

被引：8
|
作者：
Peng Liping [1 ,2 ]
Fang Liang [2 ]
Zhao Yan [1 ]
Wu Weidong [1 ]
Ruan Haibo [2 ,3 ]
Kong Chunyang [3 ]
机构：
[1] CAEP, Res Ctr Laser Fus, Sci & Technol Plasma Phys Lab, Mianyang 621900, Peoples R China
[2] Chongqing Univ, Dept Appl Phys, Chongqing 400030, Peoples R China
[3] Chongqing Normal Univ, Dept Appl Phys, Chongqing 400047, Peoples R China
来源：
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION | 2017年 / 32卷 / 04期
基金：
中国国家自然科学基金;
关键词：
RF magnetron sputtering; optical properties; indium-doped ZnO; semiconducting II-VI materials; ZNO THIN-FILMS; OPTICAL-PROPERTIES; STRAIN;
D O I：
10.1007/s11595-017-1681-z
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium doped ZnO films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of ZnO thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped ZnO thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped ZnO thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3x10(-4) Omega.cm and the highest carrier concentration of 1.86x10(21) cm(-3) can be obtained from ZnO thin films with an indium content of 5at% in the target.
引用
收藏
页码：866 / 870
页数：5
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