Nanoindentation response of compound semiconductors

被引：5
作者：
Le Bourhis, E. [1 ]
Patriarche, G. [2 ]
机构：
[1] Univ Poitiers, Lab Met Phys, CNRS, UMR 6630,SP2MI Teleport 2 Bd M&P, BP 30179, F-86962 Futuroscope, France
[2] UPR 20 CNRS, Lab Photoniq Nanostruct, Marcoussis 91460, France
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8 | 2007年 / 4卷 / 08期
关键词：
D O I：
10.1002/pssc.200675450
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper reviews the nanoindentation behaviour of III-V semiconductors under concentrated load and its implication for optoelectronic-device design. We consider first, fundamental aspects involved into the mechanical resistance to contact loading of semiconductor single crystals (elastic-plastic transition, indentation strain, hardness-yield relationship). The paper then describes recent applicative studies aimed at improving the heterostructure quality used in optoelectronic applications and emphasizes the so-called mechanical design (alloying and compliant substructure). (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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收藏
页码：3002 / +
页数：2
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