Radiation-induced dark current in CMOS active pixel sensors

被引：55

作者：

Cohen, M ^{[1
]}

David, JP ^{[1
]}

机构：

[1] Onera, Toulouse, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2000年 / 47卷 / 06期

关键词：

D O I：

10.1109/23.903797

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Degradation behavior of CMOS active pixel sensors (APS) exposed to protons and Cobalt60 is presented. The most sensitive parameter is the dark current: the mean value of the degradation is always dominated by ionizing effects.

引用

页码：2485 / 2491

页数：7

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