Structural, electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD

被引：10

作者：

Kong, Lingyi ^{[1
]}

Ma, Jin ^{[1
]}

Zhu, Zhen ^{[1
]}

Luan, Caina ^{[1
]}

Ji, Feng ^{[1
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 20期

基金：

中国国家自然科学基金;

关键词：

Crystal structure; X-ray diffraction; Metalorganic chemical vapor deposition; Oxides; THIN-FILMS; TIN; NANOWIRES; GROWTH; TIO2; BEAM;

D O I：

10.1016/j.jcrysgro.2010.07.019

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SnO2 films have been deposited on Y-stabilized ZrO2 (YSZ) (1 0 0) substrates at different substrate temperatures (500-800 degrees C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 degrees C are epitaxial SnO2 films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO2(1 0 0)parallel to YSZ(1 00). The films deposited at 700 and 800 degrees C have mixed-phase structures of rutile and columbite SnO2. The carrier concentration of the films is in the range from 1.15 x 10(19) to 2.68 x 10(19) cm(-3), and the resistivity is from 2.48 x 10(-2) to 1.16 x 10(-2) Omega cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO2 films is about 3.75-3.87 eV. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2931 / 2935

页数：5