Structural, electrical and optical properties of SnO2 films deposited on Y-stabilized ZrO2 (100) substrates by MOCVD

SnO2 films have been deposited on Y-stabilized ZrO2 (YSZ) (1 0 0) substrates at different substrate temperatures (500-800 degrees C) by metalorganic chemical vapor deposition (MOCVD). Structural, electrical and optical properties of the films have been investigated. The films deposited at 500 and 600 degrees C are epitaxial SnO2 films with orthorhombic columbite structure, and the HRTEM analysis shows a clear epitaxial relationship of columbite SnO2(1 0 0)parallel to YSZ(1 00). The films deposited at 700 and 800 degrees C have mixed-phase structures of rutile and columbite SnO2. The carrier concentration of the films is in the range from 1.15 x 10(19) to 2.68 x 10(19) cm(-3), and the resistivity is from 2.48 x 10(-2) to 1.16 x 10(-2) Omega cm. The absolute average transmittance of the films in the visible range exceeds 90%. The band gap of the obtained SnO2 films is about 3.75-3.87 eV. (C) 2010 Elsevier B.V. All rights reserved.