Enhancement of the light output performance for GaN-based light-emitting diodes by bottom pillar structure

被引：37
|
作者：
Wang, Chien-Chun
Ku, Han
Liu, Chien-Chih
Chong, Kwok-Keung
Hung, Chen-I
Wang, Yeong-Her
Houng, Mau-Phon [1 ]
机构：
[1] Natl Cheng Kung Univ, Inst Electro Opt Sci & Engn, Tainan 701, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
[3] Nan Jeon Inst Technol, Dept Elect Engn, Tainan 737, Taiwan
[4] Natl Kaohsiung Marine Univ, Dept Microelect Engn, Kaohsiung 811, Taiwan
[5] Natl Cheng Kung Univ, Dept Mech Engn, Tainan 70101, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 12期
关键词：
D O I：
10.1063/1.2786015
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A three-dimensional model with finite difference and time domain was established to investigate the enhancement of the light output intensity of GaN light-emitting diodes (LEDs) with bottom pillar (BP) structure. Through comparing the normalized light extraction intensity of GaN LEDs with or without BP in different dimensions, the theoretical results show that the light output intensity in the LED with BP structure involved could be enhanced by about 30%. The influence of BP structure on the light output intensity of a LED could be explained by the physical model of light interaction. In addition, the experimental results also show the same trend to the theoretical calculations. (c) 2007 American Institute of Physics.
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页数：3
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