Characterizations of pulsed laser deposited SiC thin films

被引：28
作者：
Katharria, Y. S. [1 ]
Kumar, Sandeep [1 ]
Prakash, Ram [2 ]
Choudhary, R. J. [2 ]
Singh, F. [1 ]
Phase, D. M. [2 ]
Kanjilal, D. [1 ]
机构：
[1] Inter Univ Accelerator Ctr, New Delhi 110067, India
[2] UGC DAE Consortium Sci Res, Indore 452017, India
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2007年 / 353卷 / 52-54期
关键词：
Raman scattering; UPS/XPS; X-ray diffraction; laser deposition; atomic force and scanning tunneling microscopy;
D O I：
10.1016/j.jnoncrysol.2007.07.008
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Thin films of silicon carbide (SiC) were prepared using pulsed laser deposition (PLD) on Si(100) substrates at a temperature of 370 degrees C. Various structural characterizations showed the development of short-range SiC precipitates in the films. These films were annealed isochronally at temperatures of 800 degrees C, 1000 degrees C and 1200 degrees C for 2 h under an inert environment. Thermally induced crystalline ordering of SiC into beta-SiC phase was investigated by X-ray diffraction (XRD), Raman spectroscopy and Fourier transforms infrared (FTIR) spectroscopic measurements. In addition to the crystallization of SiC films, high temperature annealing resulted in the dissolution of carbon clusters found in the as-grown films. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：4660 / 4665
页数：6
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