Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators

被引：77

作者：

Verona, C. ^{[1
]}

Ciccognani, W. ^{[2
]}

Colangeli, S. ^{[2
]}

Limiti, E. ^{[2
]}

Marinelli, Marco ^{[1
]}

Verona-Rinati, G. ^{[1
]}

机构：

[1] Univ Roma Tor Vergata, Dip Ingn Ind, Via Politecn 1, I-00133 Rome, Italy

[2] Univ Roma Tor Vergata, Dip Ingn Elettron, Via Politecn 1, I-00133 Rome, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 120卷 / 02期

关键词：

TRANSISTORS; DETECTORS; MOBILITY;

D O I：

10.1063/1.4955469

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a comparative study of transfer doping of hydrogenated single crystal diamond surface by insulators featured by high electron affinity, such as Nb2O5, WO3, V2O5, and MoO3. The low electron affinity Al2O3 was also investigated for comparison. Hole transport properties were evaluated in the passivated hydrogenated diamond films by Hall effect measurements, and were compared to un-passivated diamond films (air-induced doping). A drastic improvement was observed in passivated samples in terms of conductivity, stability with time, and resistance to high temperatures. The efficiency of the investigated insulators, as electron accepting materials in hydrogenated diamond surface, is consistent with their electronic structure. These surface acceptor materials generate a higher hole sheet concentration, up to 6.5 x 10(13) cm(-2), and a lower sheet resistance, down to 2.6 k Omega/sq, in comparison to the atmosphere-induced values of about 1 x 10(13) cm(-2) and 10 kX/sq, respectively. On the other hand, hole mobilities were reduced by using high electron affinity insulator dopants. Hole mobility as a function of hole concentration in a hydrogenated diamond layer was also investigated, showing a well-defined monotonically decreasing trend. Published by AIP Publishing.

引用

页数：7

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