InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall

被引：36

作者：

Kirilenko, Pavel ^{[1
]}

Iida, Daisuke ^{[1
]}

Zhuang, Zhe ^{[1
]}

Ohkawa, Kazuhiro ^{[1
]}

机构：

[1] King Abdullah Univ Sci & Technol KAUST, Comp Elect & Math Sci & Engn Div, Elect & Comp Engn Program, Thuwal 239556900, Saudi Arabia

来源：

APPLIED PHYSICS EXPRESS | 2022年 / 15卷 / 08期

关键词：

InGaN; Micro-LED; dry etching; passivation; non-radiative recombination; LIGHT-EMITTING-DIODES; SURFACE RECOMBINATION; LAYER; IMPACT;

D O I：

10.35848/1882-0786/ac7fdc

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the effect of the sidewall passivation by hydrogen plasma on the InGaN green micro-LED performance. Hydrogen passivation deactivates the surface region of p-GaN around the perimeter of the device mesa. Thus, hole injection is suppressed in this region, where etching-caused material degradation results in leakage current, decreasing device efficiency. We have confirmed the hydrogen passivation effect on LED square pixels with sizes of 20 and 100 mu m. For smaller LEDs, the reverse leakage current has reduced more than tenfold, and the external quantum efficiency of LEDs was enhanced 1.4-times due to the suppression of the non-radiative recombination.

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页数：5

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