Recent advances on crystalline materials-based flexible memristors for data storage and neuromorphic applications

被引:58
|
作者
Li, Yang [1 ]
Zhang, Cheng [1 ]
Shi, Zhiming [1 ]
Ma, Chunlan [1 ]
Wang, Jun [1 ]
Zhang, Qichun [2 ,3 ]
机构
[1] Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Tech, Suzhou 215009, Peoples R China
[2] City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China
[3] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong 999077, Peoples R China
基金
中国国家自然科学基金;
关键词
flexible memristor; 2D material; metal-organic framework; covalent organic framework; perovskite; COVALENT ORGANIC FRAMEWORK; HALIDE PEROVSKITES; RESISTIVE MEMORY; SWITCHING BEHAVIOR; THIN-FILMS; DEVICES; INFORMATION; PERFORMANCE; FABRICATION; DEPOSITION;
D O I
10.1007/s40843-021-1771-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Memristors have recently emerged as promising contenders for in-memory computing and artificial neural networks, attributed to their analogies to biological synapses and neurons in structural and electrical behaviors. From the diversity level, a variety of materials have been demonstrated to have great potential for memristor applications. Herein, we focus on one class of crystalline materials (CMs)-based flexible memristors with state-of-the-art experimental demonstrations. Firstly, the typical device structure and switching mechanisms are introduced. Secondly, the recent advances on CMs-based flexible memristors, including 2D materials, metal-organic frameworks, covalent organic frameworks, and perovskites, as well as their applications for data storage and neuromorphic devices are comprehensively summarized. Finally, the future challenges and perspectives of CMs-based flexible memristors are presented.
引用
收藏
页码:2110 / 2127
页数:18
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