Nanojunction effects in multiple ZnO nanowire gas sensor

被引：74

作者：

Khan, R. ^{[1
]}

Ra, H. -W. ^{[1
]}

Kim, J. T. ^{[1
]}

Jang, W. S. ^{[2
]}

Sharma, D. ^{[1
]}

Im, Y. H. ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn & Technol, Jeonju 561756, South Korea

[2] Natl Fus Res Inst, Convergence Plasma Res Ctr, Taejon 305333, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2010年 / 150卷 / 01期

关键词：

Semiconductor oxide; Multiple nanowire; Nanojunction; Gas sensor; OXIDE NANOWIRE; NANOSTRUCTURES; NANORODS; SURFACE; DEVICES;

D O I：

10.1016/j.snb.2010.06.052

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The effects of nanojunctions in multiple ZnO nanowire sensors were investigated in terms of the electrical properties, the sensor response, and the rate characteristic of sensor response based on a comparison against single nanowire sensors. Due to the effects of nanojunctions. the multiple nanowire devices showed reduced gating effects as an electrical characteristic and an enhanced sensor response in hydrogen detection as compared to single nanowire device On the other hand, it was found that the sensor response rate in multiple nanowires was affected by gas diffusion inside the nanojunctions The effect of the nanojunctions on the rate characteristics of the sensor response was quantified from simplified kinetic-diffusion modeling based on the kinetic information of the single nanowire (C) 2010 Elsevier B.V. All rights reserved

引用

页码：389 / 393

页数：5

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