Optical characterization of mercury cadmium telluride epitaxial layers with arbitrary degree of carrier degeneracy

被引：1

作者：

Djuric, Z ^{[1
]}

Jaksic, Z ^{[1
]}

Djinovic, Z ^{[1
]}

Jovic, V ^{[1
]}

机构：

[1] ICTM, Inst Microelect Technol & Single Crystal, Belgrade, Yugoslavia

来源：

ADVANCED MATERIALS AND PROCESSES: YUCOMAT II | 1998年 / 282-2卷

关键词：

materials in electronics; mercury cadmium telluride; epitaxial growth;

D O I：

10.4028/www.scientific.net/MSF.282-283.131

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The paper presents some recent achievements in the field of infrared spectroscopy of mercury cadmium telluride (MCT). A general model for infrared absorption of single crystalline MCT is given, which takes into account the nonparabolicity of bands and possible degeneration of semiconductor material, and includes exponential band-tailing and the free-carrier absorption. Besides the accurate model, some approximations useful in practical work are also given. A method for calculation of infrared transmission spectra for unhomogeneous samples by using the multilayer thin film theory is presented. The method is applied for determination of composition profiles of epitaxial mercury cadmium telluride layers with an arbitrary degree of degeneration. Theoretical results are compared with experiments.

引用

页码：131 / 138

页数：8

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