250V-Class lateral SOI devices for driving HDTV PDPs

被引：27

作者：

Sumida, H. ^{[1
]}

Maiguma, K. ^{[1
]}

Shimizu, N. ^{[1
]}

Kobayashi, H. ^{[1
]}

机构：

[1] Fuji Elect Device Technol Co Ltd, 4-18-1 Tsukama, Matsumoto, Nagano 3900821, Japan

来源：

PROCEEDINGS OF THE 19TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 2007年

关键词：

D O I：

10.1109/ISPSD.2007.4294974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduces our newest 250V-class SOI lateral power devices for HDTV PDP scan driver ICs, which are the 6th-generation SOI devices for us. The lateral IGBT, nch-MOSFET, pch-MOSFET with thick-gate oxide, and diode are included in our 6th-generation SOI device menu. Their characteristics are shown.

引用

页码：229 / +

页数：2