Photovoltaic application of Si nanoparticles fabricated by multihollow plasma discharge CVD: Dye and Si co-sensitized solar cells

被引：3

作者：

Seo, Hyunwoong ^{[1
]}

Ichida, Daiki ^{[1
]}

Hashimoto, Shinji ^{[1
]}

Uchida, Giichiro ^{[2
]}

Itagaki, Naho ^{[1
]}

Koga, Kazunori ^{[1
]}

Shiratani, Masaharu ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka 8190395, Japan

[2] Osaka Univ, Joining & Welding Res Inst, Ibaraki, Osaka 5670047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 01期

关键词：

POLYSULFIDE ELECTROLYTE; CHARGE RECOMBINATION; IMPEDANCE SPECTROSCOPY; SILICON NANOCRYSTALS; TIO2; FILMS; LIGHT; PERFORMANCE; ADSORPTION; GENERATION; DEPOSITION;

D O I：

10.7567/JJAP.54.01AD02

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dye-sensitized solar cells (DSCs) still need wider absorption range despite their stable and good performance. This work proposed the co-sensitization of Si quantum dot (QD) and N749 dye for better photo-generation. Si QD was chemically stable with regard to all DSC components and its stability enabled to co-sensitize with dye. Si QDs were fabricated by multihollow discharge plasma chemical vapor deposition and applied for the co-sensitization. Si and dye co-sensitization led to the increase of incident photon to current conversion efficiency and decrease of internal impedance as compared with a standard DSC. As a result, short-circuit current density was increased over 1 mA/cm(2) and the performance was enhanced with co-sensitization from 4.36 to 5.10%. Si and dye co-sensitization was very effective because the enhancement was much larger than the performance of Si QDSC without dye sensitization. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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