CeO2 thin films on Si(100) obtained by pulsed laser deposition

被引：32
作者：
Cossarutto, L
Chaoui, N
Millon, E
Muller, JF
Lambert, J
Alnot, M
机构：
[1] Univ Metz, IPC, Lab Spectrometrie Masse & Chim Laser, F-57078 Metz 3, France
[2] Univ Henri Poincare, CNRS, UMR 9992, Lab Chim Phys Environm, F-54600 Villers Les Nancy, France
来源：
APPLIED SURFACE SCIENCE | 1998年 / 126卷 / 3-4期
关键词：
CeO2 thin films; pulsed laser deposition; Si(100);
D O I：
10.1016/S0169-4332(98)00188-3
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of CeO2 have been deposited on single crystal silicon (100) samples at room temperature by using pulsed laser deposition (PLD). The study of ion-molecule reactions occurring in the microplasma (by laser microprobe coupled with mass spectrometry (LMMS)) allows the understanding of the oxygen deficiency observed in films by X-ray photoelectron spectroscopy (XPS). (C) 1998 Elsevier Science B.V.
引用
收藏
页码：352 / 355
页数：4
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