Electric field modulated conduction mechanism in Al/BaTiO3/La0.67Sr0.33MnO3 heterostructures

被引：6

作者：

Zheng, Dongxing ^{[1
]}

Li, Dong ^{[1
]}

Gong, Junlu ^{[1
]}

Jin, Chao ^{[1
]}

Li, Peng ^{[2
]}

Zhang, Xixiang ^{[2
]}

Bai, Haili ^{[1
]}

机构：

[1] Tianjin Univ, Fac Sci, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparat Te, Tianjin 300072, Peoples R China

[2] King Abdullah Univ Sci & Technol, Phys Sci & Engn PSE Div, Thuwal 239556900, Saudi Arabia

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 06期

基金：

中国国家自然科学基金;

关键词：

ELECTRORESISTANCE; POLARIZATION; SURFACE; MEMORY; FILMS;

D O I：

10.1063/1.4997412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mediating a metastable state is a promising way to achieve a giant modulation of physical properties in artificial heterostructures. A metastable state La0.67Sr0.33MnO3 (LSMO) layer suffering tensile strain was grown on MgO substrates. Incorporating with the ferroelectric BaTiO3 (BTO) layer, an accumulation or depletion state controlled by electric fields can be formed at the BTO/LSMO interface, which drives a switching of the conduction mechanism between space charge limited conduction and Poole-Frenkel emission, corresponding to the low and high resistance states. Our results lighten an effective way for electric-field modulated resistance states in multiferroic magnetoelectric devices. Published by AIP Publishing.

引用

页数：5

共 31 条

[1] FERROELECTRIC SCHOTTKY DIODE [J].

BLOM, PWM ;

WOLF, RM ;

CILLESSEN, JFM ;

KRIJN, MPCM .

PHYSICAL REVIEW LETTERS, 1994, 73 (15) :2107-2110

[2] Surface potential of ferroelectric thin films investigated by scanning probe microscopy [J].

Chen, XQ ;

Yamada, H ;

Horiuchi, T ;

Matsushige, K ;

Watanabe, S ;

Kawai, M ;

Weiss, PS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (05) :1930-1934

[3] Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3 [J].

Choi, T. ;

Lee, S. ;

Choi, Y. J. ;

Kiryukhin, V. ;

Cheong, S. -W. .

SCIENCE, 2009, 324 (5923) :63-66

[4] Magnetoelectric Coupling Induced by Interfacial Orbital Reconstruction [J].

Cui, Bin ;

Song, Cheng ;

Mao, Haijun ;

Wu, Huaqiang ;

Li, Fan ;

Peng, Jingjing ;

Wang, Guangyue ;

Zeng, Fei ;

Pan, Feng .

ADVANCED MATERIALS, 2015, 27 (42) :6651-+

[5] Predicted magnetoelectric effect in Fe/BaTiO3 multilayers:: Ferroelectric control of magnetism [J].

Duan, Chun-Gang ;

Jaswal, S. S. ;

Tsymbal, E. Y. .

PHYSICAL REVIEW LETTERS, 2006, 97 (04)

[6] Electron emission in intense electric fields [J].

Fowler, RH ;

Nordheim, L .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-CONTAINING PAPERS OF A MATHEMATICAL AND PHYSICAL CHARACTER, 1928, 119 (781) :173-181

[7]

Frenkel J., 1938, TECH PHYS USSR, V5, P685

[8] Ferroelectric Control of Spin Polarization [J].

Garcia, V. ;

Bibes, M. ;

Bocher, L. ;

Valencia, S. ;

Kronast, F. ;

Crassous, A. ;

Moya, X. ;

Enouz-Vedrenne, S. ;

Gloter, A. ;

Imhoff, D. ;

Deranlot, C. ;

Mathur, N. D. ;

Fusil, S. ;

Bouzehouane, K. ;

Barthelemy, A. .

SCIENCE, 2010, 327 (5969) :1106-1110

[9] Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure [J].

Hu, Zhongqiang ;

Li, Qian ;

Li, Meiya ;

Wang, Qiangwen ;

Zhu, Yongdan ;

Liu, Xiaolian ;

Zhao, Xingzhong ;

Liu, Yun ;

Dong, Shuxiang .

APPLIED PHYSICS LETTERS, 2013, 102 (10)

[10] A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors [J].

Jiang, An Quan ;

Wang, Can ;

Jin, Kui Juan ;

Liu, Xiao Bing ;

Scott, James F. ;

Hwang, Cheol Seong ;

Tang, Ting Ao ;

Bin Lu, Hui ;

Yang, Guo Zhen .

ADVANCED MATERIALS, 2011, 23 (10) :1277-+

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