Paramagnetism in single-phase Sn1-xCoxO2 dilute magnetic semiconductors

被引：39

作者：

Ghosh, S. ^{[1
]}

De Munshi, D. ^{[1
]}

Mandel, K. ^{[1
]}

机构：

[1] SN Bose Natl Ctr Basic Sci, Dept Mat Sci, Kolkata 700098, India

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 12期

关键词：

SPECTROSCOPIC ELLIPSOMETRY; DOPED SNO2; THIN-FILMS; ZNO; FERROMAGNETISM; OXIDE; TRANSITION;

D O I：

10.1063/1.3437641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transition metal (TM) Co doped SnO2 dilute magnetic semiconductor (DMS) in both nano- and bulk state are prepared by solvothermal and mechanosyhtesis route, respectively. Contraction in unit cell volume of tetragonal rutile SnO2 after Co doping and redshift in energy band gap compared to that of undoped SnO2 ensures the incorporation of smaller Co2+ ions replacing larger host cations Sn4+. Vibrating sample magnetometer measurements show that paramagnetism is the intrinsic magnetic property in single-phase Sn1-xCoxO whereas non-DMS related ferromagnetism is associated only with the corresponding nanostructures. Paramagnetism is also confirmed by thermal dependence of magnetization M (T) and magnetic susceptibility (x) measurement in between 80 <= T <= 350 K. (c) 2010 American Institute of Physics. [doi:10.1063/1.3437641]

引用

页数：5

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