Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition

被引：31
作者：
Sakai, T
Watanabe, T
Osada, M
Kakihana, M
Noguchi, Y
Miyayama, M
Funakubo, H
机构：
[1] Tokyo Inst Technol, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[2] Japan Sci & Technol, PRESTO, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[4] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 5A期
关键词：
Bi4Ti3O12; ferroelectricity; substitution; tungsten; MOCVD;
D O I：
10.1143/JJAP.42.2850
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
W-substituted Bi4Ti3O12 (BIT), Bi-4(Ti3-xWx)O-12, films were prepared on (I I l)Pt/IrO2/SiO2/Si substrates at 600degreesC by metal-organic chemical vapor deposition (MOCVD). The degree of (117) orientation and the lattice spacing of 117 Bi-4(Ti3-xWx)O-12 increased with increasing W content up to x = 0.25. Ferroelectricity was hardly observed in as-deposited films but confirmed in the films after annealing at 700degreesC. The coercive field (E-c) monotonically increased with increasing W content, but the remanent polarization (P-r) showed a maximum value at x = 0.11. P-r and E-e of Bi-4(Ti2.89W0.11)O-12 thin film after heat treatment was 13 muC/cm(2) and 160 kV/cm, respectively. W-substituted films showed high fatigue resistance against continuous switching up to 8 x 10(10) cycles. These results show that W substitution for BIT film is effective in improving the ferroelectricity.
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页码：2850 / 2852
页数：3
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